Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD)

Due to its wide bandgap (6.2 eV), its high thermal conductivity (3.3 WK‐1cm‐1) and high electrical resistivity (1013 Ωcm), AlN is a very expected III‐N semiconductor for applications in high power electronics (HEMTs) and optoelectronics (UV LEDs). In this work, the homoepitaxial growth of aluminum nitride on polar and non‐polar AlN PVT seeds by HTCVD is studied. From our knowledge, the AlN homoepitaxial growth by HVPE or HTCVD on polar and non‐polar bulk AlN substrates has not been reported. The potential of investigation in this new range of experiments conditions, i.e. high temperature and high growth rate, as well as the deposition of non‐polar AlN crystals (Paskova, Phys. Status Solidi B 245(6), 1011 (2008) and Schwarz and Kneissl, Phys. Status Solidi RRL 1(3), A44 (2007) [1, 2]) is very promising for epitaxial growth and could extend the field of applications (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)