Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a stack of distinct InGaN layers. The driving mechanism is shown to be lateral fluctuations of the indium composition, that arise to accommodate the increasing strain energy of the InGaN layer. Three distinct stages of growth have been identified. First, a homogeneous, 2D InGaN layer forms, pseudomorphically strained on the underlying GaN. Then, at around 30 nm large lateral fluctuations of the indium composition are observed and a second pseudomorphic layer, composed of indium‐rich and indium‐poor clusters, is formed. Finally induces a 2D/3D transition at 60 nm and a 3D InGaN layer is formed.