Chemical analysis of pulsed laser deposited a-CNx films by comparative infrared and X-ray photoelectron spectroscopies

Amorphous carbon nitride films are deposited at room temperature on silicon substrates by ArF excimer laser (193nm) ablation of a graphite target in nitrogen atmosphere. By tuning the process parameters, fine control of the carbon–carbon and carbon–nitrogen bond configuration is achieved in a broad...

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Veröffentlicht in:Surface & coatings technology 2000-03, Vol.125 (1-3), p.308-312
Hauptverfasser: Szörényi, T., Fuchs, C., Fogarassy, E., Hommet, J., Le Normand, F.
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Sprache:eng
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Zusammenfassung:Amorphous carbon nitride films are deposited at room temperature on silicon substrates by ArF excimer laser (193nm) ablation of a graphite target in nitrogen atmosphere. By tuning the process parameters, fine control of the carbon–carbon and carbon–nitrogen bond configuration is achieved in a broad range as followed by X-ray photoelectron spectroscopy (XPS) and infrared (IR) absorption spectroscopy. Based on the comparative and quantitative analysis of changes in measured IR versus XPS spectra as a function of reactive gas pressure, laser fluence and target-to-substrate distance, and on a critical review of the existing interpretation of IR data, an assignment of the components of the broad band extending from 900 to 1900cm−1 in the IR spectra to specific carbon–carbon and carbon–nitrogen bond configurations is proposed.
ISSN:0257-8972
1879-3347
DOI:10.1016/S0257-8972(99)00580-0