Chemical analysis of pulsed laser deposited a-CNx films by comparative infrared and X-ray photoelectron spectroscopies
Amorphous carbon nitride films are deposited at room temperature on silicon substrates by ArF excimer laser (193nm) ablation of a graphite target in nitrogen atmosphere. By tuning the process parameters, fine control of the carbon–carbon and carbon–nitrogen bond configuration is achieved in a broad...
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Veröffentlicht in: | Surface & coatings technology 2000-03, Vol.125 (1-3), p.308-312 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Amorphous carbon nitride films are deposited at room temperature on silicon substrates by ArF excimer laser (193nm) ablation of a graphite target in nitrogen atmosphere. By tuning the process parameters, fine control of the carbon–carbon and carbon–nitrogen bond configuration is achieved in a broad range as followed by X-ray photoelectron spectroscopy (XPS) and infrared (IR) absorption spectroscopy. Based on the comparative and quantitative analysis of changes in measured IR versus XPS spectra as a function of reactive gas pressure, laser fluence and target-to-substrate distance, and on a critical review of the existing interpretation of IR data, an assignment of the components of the broad band extending from 900 to 1900cm−1 in the IR spectra to specific carbon–carbon and carbon–nitrogen bond configurations is proposed. |
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ISSN: | 0257-8972 1879-3347 |
DOI: | 10.1016/S0257-8972(99)00580-0 |