DIELECTRIC PROPERTIES AT MICROWAVES FREQUENCIES OF (Ni, Ti, La, Mg)-DOPED Ba0.3Sr0.7TiO3 THIN FILMS DEPOSITED ON HIGH-RESISTIVITY SILICON SUBSTRATES

Pure and doped Ba0.3Sr0.7TiO3 thin films are deposited by radio frequency magnetron sputtering using the in-situ process on high-resistivity silicon substrates. Four dopants, La, Ti, Mg, and Ni with different concentrations from 1 to 5 mol%, were studied. The permittivity, dielectric losses, and tun...

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Veröffentlicht in:	Journal of the American Ceramic Society 2011-01, Vol.94 (6), p.1661-1663
Hauptverfasser:	Ponchel, F, Remiens, D, Midy, J, Legier, J-F, Soyer, C, Lasri, T, Guegan, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Deposition Dielectric loss Figure of merit Magnetron sputtering Nickel Silicon substrates Thin films Titanium
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container_title	Journal of the American Ceramic Society
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creator	Ponchel, F Remiens, D Midy, J Legier, J-F Soyer, C Lasri, T Guegan, G
description	Pure and doped Ba0.3Sr0.7TiO3 thin films are deposited by radio frequency magnetron sputtering using the in-situ process on high-resistivity silicon substrates. Four dopants, La, Ti, Mg, and Ni with different concentrations from 1 to 5 mol%, were studied. The permittivity, dielectric losses, and tunability were determined up to 60 GHz using a coplanar waveguide. The difficulty of simultaneously improving these electrical properties, particularly the loss tangent and tunability, is highlighted. The best improvement was obtained for 5 mol% La for which the losses were in the order of 7.4%, the tunability and the figure of merit were around 29% and 3.9%, respectively, at 60 GHz.
doi_str_mv	10.1111/j.1551-2916.2011.04546.x
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subjects	Deposition Dielectric loss Figure of merit Magnetron sputtering Nickel Silicon substrates Thin films Titanium
title	DIELECTRIC PROPERTIES AT MICROWAVES FREQUENCIES OF (Ni, Ti, La, Mg)-DOPED Ba0.3Sr0.7TiO3 THIN FILMS DEPOSITED ON HIGH-RESISTIVITY SILICON SUBSTRATES
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