CVD of Ru, Pt and Pt-based alloy thin films using ethanol as mild reducing agent

Noble metal thin films (Pt and Ru) were grown at 250 °C, using commercially available precursors, by the pulsed spray evaporation chemical vapor deposition (PSE-CVD) technique. The growth process relies on the thermally activated reaction of ethanol with the metal acetylacetonate precursors. The syn...

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Veröffentlicht in:Materials chemistry and physics 2011-02, Vol.125 (3), p.757-762
Hauptverfasser: Premkumar, P. Antony, Prakash, N.S., Gaillard, F., Bahlawane, N.
Format: Artikel
Sprache:eng
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Zusammenfassung:Noble metal thin films (Pt and Ru) were grown at 250 °C, using commercially available precursors, by the pulsed spray evaporation chemical vapor deposition (PSE-CVD) technique. The growth process relies on the thermally activated reaction of ethanol with the metal acetylacetonate precursors. The synthesized polycrystalline films are pure metal phase and crystallize in hexagonal (Ru) and cubic (Pt) structures. The formation of an interfacial silicide phase was noticed in the case of the Pt growth on silicon substrates. The films are smooth, continuous and show a steady growth without any noticeable incubation time. The single-step growth of Pt-based alloys, Pt–Co and Pt–Cu, with controlled composition was performed by simply adjusting the composition of the liquid feedstock.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2010.09.062