Performance predictions of interconnect networks for advanced technology nodes
New materials are required for upcoming technologies to maintain good performance levels and increase circuit lifetime. Predictive simulations are thus performed looking at several fundamental barriers and restoration treatments in order to achieve good signal propagation and strong reliability for...
Gespeichert in:
| Veröffentlicht in: | Microelectronic engineering 2010-03, Vol.87 (3), p.321-323 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 323 |
|---|---|
| container_issue | 3 |
| container_start_page | 321 |
| container_title | Microelectronic engineering |
| container_volume | 87 |
| creator | Gallitre, M. Farcy, A. Blampey, B. Bermond, C. Fléchet, B. Ancey, P. |
| description | New materials are required for upcoming technologies to maintain good performance levels and increase circuit lifetime. Predictive simulations are thus performed looking at several fundamental barriers and restoration treatments in order to achieve good signal propagation and strong reliability for integrated circuits. Precise recommendations are finally proposed for both 32
nm and 22
nm technology nodes. |
| doi_str_mv | 10.1016/j.mee.2009.09.003 |
| format | Article |
| fullrecord | <record><control><sourceid>elsevier_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00602047v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S016793170900570X</els_id><sourcerecordid>S016793170900570X</sourcerecordid><originalsourceid>FETCH-LOGICAL-c361t-c7d223251a7ad547dd45f3d036dc7089b95ade5071a2669753eefc091fbb075e3</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWD9-gLe9ePCw6yTZbHbxVIpaoagHPYc0mbWp7aYkS6X_3iwrPQoDQ4bnzTAPITcUCgq0ul8XW8SCATTFUMBPyITWkudCVPUpmSRG5g2n8pxcxLiG9C6hnpDXdwytD1vdGcx2Aa0zvfNdzHybua7HYHzXoemzDvsfH75jluhM2_0QsFmPZtX5jf86ZJ23GK_IWas3Ea__-iX5fHr8mM3zxdvzy2y6yA2vaJ8baRnjTFAttRWltLYULbfAK2sk1M2yEdqiAEk1q6pGCo7YGmhou1yCFMgvyd3470pv1C64rQ4H5bVT8-lCDTOAChiUck8TS0fWBB9jwPYYoKAGeWqtkjw1yFNDAU-Z2zGz09HoTRvSuS4eg4yVJVAmE_cwcpiO3TsMKhqHgxoXkjVlvftnyy_NtISt</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Performance predictions of interconnect networks for advanced technology nodes</title><source>Access via ScienceDirect (Elsevier)</source><creator>Gallitre, M. ; Farcy, A. ; Blampey, B. ; Bermond, C. ; Fléchet, B. ; Ancey, P.</creator><creatorcontrib>Gallitre, M. ; Farcy, A. ; Blampey, B. ; Bermond, C. ; Fléchet, B. ; Ancey, P.</creatorcontrib><description>New materials are required for upcoming technologies to maintain good performance levels and increase circuit lifetime. Predictive simulations are thus performed looking at several fundamental barriers and restoration treatments in order to achieve good signal propagation and strong reliability for integrated circuits. Precise recommendations are finally proposed for both 32
nm and 22
nm technology nodes.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2009.09.003</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronics ; Engineering Sciences ; Exact sciences and technology ; Integrated circuits ; Interconnect ; Micro and nanotechnologies ; Microelectronics ; Predictive simulations ; Propagation ; Restoration ; SAB ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Microelectronic engineering, 2010-03, Vol.87 (3), p.321-323</ispartof><rights>2009 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-c7d223251a7ad547dd45f3d036dc7089b95ade5071a2669753eefc091fbb075e3</citedby><cites>FETCH-LOGICAL-c361t-c7d223251a7ad547dd45f3d036dc7089b95ade5071a2669753eefc091fbb075e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2009.09.003$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,310,311,315,782,786,791,792,887,3552,23937,23938,25147,27931,27932,46002</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22440127$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00602047$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Gallitre, M.</creatorcontrib><creatorcontrib>Farcy, A.</creatorcontrib><creatorcontrib>Blampey, B.</creatorcontrib><creatorcontrib>Bermond, C.</creatorcontrib><creatorcontrib>Fléchet, B.</creatorcontrib><creatorcontrib>Ancey, P.</creatorcontrib><title>Performance predictions of interconnect networks for advanced technology nodes</title><title>Microelectronic engineering</title><description>New materials are required for upcoming technologies to maintain good performance levels and increase circuit lifetime. Predictive simulations are thus performed looking at several fundamental barriers and restoration treatments in order to achieve good signal propagation and strong reliability for integrated circuits. Precise recommendations are finally proposed for both 32
nm and 22
nm technology nodes.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Interconnect</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Predictive simulations</subject><subject>Propagation</subject><subject>Restoration</subject><subject>SAB</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWD9-gLe9ePCw6yTZbHbxVIpaoagHPYc0mbWp7aYkS6X_3iwrPQoDQ4bnzTAPITcUCgq0ul8XW8SCATTFUMBPyITWkudCVPUpmSRG5g2n8pxcxLiG9C6hnpDXdwytD1vdGcx2Aa0zvfNdzHybua7HYHzXoemzDvsfH75jluhM2_0QsFmPZtX5jf86ZJ23GK_IWas3Ea__-iX5fHr8mM3zxdvzy2y6yA2vaJ8baRnjTFAttRWltLYULbfAK2sk1M2yEdqiAEk1q6pGCo7YGmhou1yCFMgvyd3470pv1C64rQ4H5bVT8-lCDTOAChiUck8TS0fWBB9jwPYYoKAGeWqtkjw1yFNDAU-Z2zGz09HoTRvSuS4eg4yVJVAmE_cwcpiO3TsMKhqHgxoXkjVlvftnyy_NtISt</recordid><startdate>20100301</startdate><enddate>20100301</enddate><creator>Gallitre, M.</creator><creator>Farcy, A.</creator><creator>Blampey, B.</creator><creator>Bermond, C.</creator><creator>Fléchet, B.</creator><creator>Ancey, P.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>20100301</creationdate><title>Performance predictions of interconnect networks for advanced technology nodes</title><author>Gallitre, M. ; Farcy, A. ; Blampey, B. ; Bermond, C. ; Fléchet, B. ; Ancey, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-c7d223251a7ad547dd45f3d036dc7089b95ade5071a2669753eefc091fbb075e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Interconnect</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Predictive simulations</topic><topic>Propagation</topic><topic>Restoration</topic><topic>SAB</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gallitre, M.</creatorcontrib><creatorcontrib>Farcy, A.</creatorcontrib><creatorcontrib>Blampey, B.</creatorcontrib><creatorcontrib>Bermond, C.</creatorcontrib><creatorcontrib>Fléchet, B.</creatorcontrib><creatorcontrib>Ancey, P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gallitre, M.</au><au>Farcy, A.</au><au>Blampey, B.</au><au>Bermond, C.</au><au>Fléchet, B.</au><au>Ancey, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance predictions of interconnect networks for advanced technology nodes</atitle><jtitle>Microelectronic engineering</jtitle><date>2010-03-01</date><risdate>2010</risdate><volume>87</volume><issue>3</issue><spage>321</spage><epage>323</epage><pages>321-323</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>New materials are required for upcoming technologies to maintain good performance levels and increase circuit lifetime. Predictive simulations are thus performed looking at several fundamental barriers and restoration treatments in order to achieve good signal propagation and strong reliability for integrated circuits. Precise recommendations are finally proposed for both 32
nm and 22
nm technology nodes.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2009.09.003</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2010-03, Vol.87 (3), p.321-323 |
| issn | 0167-9317 1873-5568 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00602047v1 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Engineering Sciences Exact sciences and technology Integrated circuits Interconnect Micro and nanotechnologies Microelectronics Predictive simulations Propagation Restoration SAB Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Performance predictions of interconnect networks for advanced technology nodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T02%3A05%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-elsevier_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Performance%20predictions%20of%20interconnect%20networks%20for%20advanced%20technology%20nodes&rft.jtitle=Microelectronic%20engineering&rft.au=Gallitre,%20M.&rft.date=2010-03-01&rft.volume=87&rft.issue=3&rft.spage=321&rft.epage=323&rft.pages=321-323&rft.issn=0167-9317&rft.eissn=1873-5568&rft.coden=MIENEF&rft_id=info:doi/10.1016/j.mee.2009.09.003&rft_dat=%3Celsevier_hal_p%3ES016793170900570X%3C/elsevier_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_els_id=S016793170900570X&rfr_iscdi=true |