Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices

A new method for the extraction of the backscattering coefficient in nanoMOS devices has been demonstrated. The method, which relies on mobility measurements in linear operation, proves very simple and reliable for the determination of the ballistic rate of transport. Moreover, it allows to obtain t...

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Veröffentlicht in:	Solid-state electronics 2009, Vol.53 (1), p.54-56
Hauptverfasser:	Pappas, I., Ghibaudo, G., Dimitriadis, C.A., Fenouillet-Béranger, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Backscattering Ballistic Channels Coefficients Compound structure devices Condensed Matter Drift Electronics Engineering Sciences Exact sciences and technology Extraction Micro and nanotechnologies Microelectronics Mobility MOSFET Nanocomposites Nanomaterials Nanostructure Other Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Beschreibung
Zusammenfassung:	A new method for the extraction of the backscattering coefficient in nanoMOS devices has been demonstrated. The method, which relies on mobility measurements in linear operation, proves very simple and reliable for the determination of the ballistic rate of transport. Moreover, it allows to obtain the drift-diffusion mobility corrected from ballistic effects and therefore to make a diagnostic of the scattering mechanisms at small gate length.
ISSN:	0038-1101 1879-2405
DOI:	10.1016/j.sse.2008.09.012