Improved GeOI substrates for pMOSFET off-state leakage control

The origin of parasitic leakage that occurs in some GeOI pMOSFETs has been investigated and located at the Ge-buried oxide (BOX) interface. Silicon passivation of that interface was found to be effective in reducing this current. An optimum thickness of the buried silicon capping is required to redu...

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Veröffentlicht in:Microelectronic engineering 2009-07, Vol.86 (7), p.1585-1588
Hauptverfasser: Romanjek, K., Augendre, E., Van Den Daele, W., Grandchamp, B., Sanchez, L., Le Royer, C., Hartmann, J.-M., Ghyselen, B., Guiot, E., Bourdelle, K., Cristoloveanu, S., Boulanger, F., Clavelier, L.
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Sprache:eng
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Zusammenfassung:The origin of parasitic leakage that occurs in some GeOI pMOSFETs has been investigated and located at the Ge-buried oxide (BOX) interface. Silicon passivation of that interface was found to be effective in reducing this current. An optimum thickness of the buried silicon capping is required to reduce the parasitic leakage current while preserving Ge-like back channel transport properties.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.069