Design, realization, and test of a 2.1-GHz low-phase-noise oscillator based on BAW resonator

This article presents the design and the realization of a 2.1‐GHz low‐phase‐noise oscillator through a combination of bulk acoustic wave resonator and negative differential resistance circuit using STMicroelectronics 0.25‐μm BiCMOS technology. A new procedure that is based on the Kurokawa criterion...

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Veröffentlicht in:Microwave and optical technology letters 2011-02, Vol.53 (2), p.405-409
Hauptverfasser: Li, Mingdong, Seok, S., Rolland, N., Rolland, P.-A.
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Sprache:eng
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Zusammenfassung:This article presents the design and the realization of a 2.1‐GHz low‐phase‐noise oscillator through a combination of bulk acoustic wave resonator and negative differential resistance circuit using STMicroelectronics 0.25‐μm BiCMOS technology. A new procedure that is based on the Kurokawa criterion and implemented with microwave CADs has been used to design the oscillator. A good agreement between the simulations and measurements has been achieved. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:405–409, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25690
ISSN:0895-2477
1098-2760
1098-2760
DOI:10.1002/mop.25690