Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

The strain relaxation in low mismatched InxAl1−xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first “strained layer...

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Veröffentlicht in:Journal of applied physics 2010-01, Vol.107 (1)
Hauptverfasser: Plissard, S., Coinon, C., Androussi, Y., Wallart, X.
Format: Artikel
Sprache:eng
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Zusammenfassung:The strain relaxation in low mismatched InxAl1−xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first “strained layer.” The threading dislocation density in the top layer is below 106/cm2 and strain is relaxed at the substrate/first layer interface by misfit dislocations. This scheme is a promising method to limit the thickness of buffer layers and obtain fully relaxed pseudosubstrates.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3275872