Gain of optically excited ZnCdSeZnSe quantum wells

We have studied the stimulated emission of MOVPE-grown quantum wells of Zn 0.78Cd 0.22Se, sandwiched between two thicker, zinc-richer layers. The gain of these samples has been measured, as a function of temperature, using the variable strip-length method. Its mechanism has been shown to be the radi...

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Veröffentlicht in:	Solid state communications 1996, Vol.97 (3), p.187-192
Hauptverfasser:	Tomasiunas, R., Pelant, Y., Guennani, D., Grun, J.B., Lévy, R., Briot, O., Gil, B., Aulombard, R.L., Sallèse, J.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	A. quantum wells A. semiconductors B. epitaxy Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties E. nonlinear optics Exact sciences and technology Ii-vi semiconductors Materials Science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Zusammenfassung:	We have studied the stimulated emission of MOVPE-grown quantum wells of Zn 0.78Cd 0.22Se, sandwiched between two thicker, zinc-richer layers. The gain of these samples has been measured, as a function of temperature, using the variable strip-length method. Its mechanism has been shown to be the radiative recombination of an inhomogeneously broadened exciton system.
ISSN:	0038-1098 1879-2766
DOI:	10.1016/0038-1098(95)00631-1