Zeeman splittings of excitonic transitions at the Γ point in wurtzite GaN: A magnetoreflectance investigation

Wurtzite GaN on (0001) sapphire is studied by means of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings to be about 0.05 meV/T for the X-A and X-C excitons and almost zero for the X-B exciton. Reflectance and dich...

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Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 1997, Vol.56 (12), p.R7108-R7111
Hauptverfasser: Campo, J., Julier, M., Coquillat, D., Lascaray, J. P., Scalbert, D., Briot, O.
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Sprache:eng
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Zusammenfassung:Wurtzite GaN on (0001) sapphire is studied by means of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings to be about 0.05 meV/T for the X-A and X-C excitons and almost zero for the X-B exciton. Reflectance and dichroism are interpreted with a model of Gaussian dispersion of the excitonic energies and are in excellent agreement with previously proposed band-edge models.
ISSN:0163-1829
1098-0121
1095-3795
1550-235X
DOI:10.1103/PhysRevB.56.R7108