Zeeman splittings of excitonic transitions at the Γ point in wurtzite GaN: A magnetoreflectance investigation
Wurtzite GaN on (0001) sapphire is studied by means of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings to be about 0.05 meV/T for the X-A and X-C excitons and almost zero for the X-B exciton. Reflectance and dich...
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Veröffentlicht in: | Physical review. B, Condensed matter Condensed matter, 1997, Vol.56 (12), p.R7108-R7111 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Wurtzite GaN on (0001) sapphire is studied by means of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings to be about 0.05 meV/T for the X-A and X-C excitons and almost zero for the X-B exciton. Reflectance and dichroism are interpreted with a model of Gaussian dispersion of the excitonic energies and are in excellent agreement with previously proposed band-edge models. |
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ISSN: | 0163-1829 1098-0121 1095-3795 1550-235X |
DOI: | 10.1103/PhysRevB.56.R7108 |