Terahertz imaging with GaAs field-effect transistors

Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.

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Bibliographische Detailangaben
Veröffentlicht in:	Electronics letters 2008-03, Vol.44 (6), p.408-409
Hauptverfasser:	LISAUSKAS, A, VON SPIEGEL, W, BOUBANGA-TOMBET, S, EL FATIMY, A, COQUILLAT, D, TEPPE, F, DYAKONOVA, N, KNAP, W, ROSKOS, H. G
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed Matter Electronics Exact sciences and technology Imaging devices Materials Science Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Beschreibung
Zusammenfassung:	Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.
ISSN:	0013-5194 1350-911X
DOI:	10.1049/el:20080172