Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization
In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition...
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Veröffentlicht in: | Journal of applied physics 2010-01, Vol.107 (2), p.024310-024310-5 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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