Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization

In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition...

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Veröffentlicht in:Journal of applied physics 2010-01, Vol.107 (2), p.024310-024310-5
Hauptverfasser: Abed, Hichem, Sahaf, Houda, Reguer, Alan, Rochdi, Nabil, Tonneau, Didier, Bedu, Frederic, Dallaporta, Hervé, Jamgotchian, Haik
Format: Artikel
Sprache:eng
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Zusammenfassung:In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition (FIBID) technology. Our study demonstrates that the morphology of the synthesized nanowires is temperature and time dependent revealing a thermal gradient but also both vapor-liquid-solid and vapor-solid growth effects. Typical silicon nanowires dimensions are a length of 1 - 2   μ m and diameters of 30-40 nm. Structural characterization is performed by high resolution transmission electron microscopy using high energy electron transparent self-supported silicon nitride membranes. Electrical characteristics of FIBID- and self-connected nanowires are obtained. In both cases, they exhibit rectifying behavior.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3284940