Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization

Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization

In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition...

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Veröffentlicht in:Journal of applied physics 2010-01, Vol.107 (2), p.024310-024310-5
Hauptverfasser: Abed, Hichem, Sahaf, Houda, Reguer, Alan, Rochdi, Nabil, Tonneau, Didier, Bedu, Frederic, Dallaporta, Hervé, Jamgotchian, Haik
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container_end_page 024310-5
container_issue 2
container_start_page 024310
container_title Journal of applied physics
container_volume 107
creator Abed, Hichem
Sahaf, Houda
Reguer, Alan
Rochdi, Nabil
Tonneau, Didier
Bedu, Frederic
Dallaporta, Hervé
Jamgotchian, Haik
description In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition (FIBID) technology. Our study demonstrates that the morphology of the synthesized nanowires is temperature and time dependent revealing a thermal gradient but also both vapor-liquid-solid and vapor-solid growth effects. Typical silicon nanowires dimensions are a length of 1 - 2   μ m and diameters of 30-40 nm. Structural characterization is performed by high resolution transmission electron microscopy using high energy electron transparent self-supported silicon nitride membranes. Electrical characteristics of FIBID- and self-connected nanowires are obtained. In both cases, they exhibit rectifying behavior.
doi_str_mv 10.1063/1.3284940
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fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00475814v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_00475814v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c318t-dcecd9c3499376094661ed327652a197b65d5e191e732f0c518369095b9f010f3</originalsourceid><addsrcrecordid>eNp1kMFKAzEQhoMoWKsH3yBXD1tnNpvNxoNQilphwUP1HNJslka2WUlSpT69W1vqydMwwzfD_B8h1wgThJLd4oTlVSELOCEjhEpmgnM4JSOAHLNKCnlOLmJ8B0CsmBwRvXCdM72nXvv-ywUbadz6tLLRRTqMNY2b5dqZ0HtnaLJh7bzu7ugihY1Jm6A7qn1DbWdNCs4MrVnpoM1Aum-dXO8vyVmru2ivDnVM3h4fXmfzrH55ep5N68wwrFLWGGsaaVghJRMlyKIs0TYsFyXPNUqxLHnDLUq0guUtGD78X0qQfClbQGjZmNzs7650pz6CW-uwVb12aj6t1W4GUAheYfGJf-yQK8Zg2-MCgtp5VKgOHgf2fs9G49Jvov_hg0x1lKnilv0Avgl67Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Abed, Hichem ; Sahaf, Houda ; Reguer, Alan ; Rochdi, Nabil ; Tonneau, Didier ; Bedu, Frederic ; Dallaporta, Hervé ; Jamgotchian, Haik</creator><creatorcontrib>Abed, Hichem ; Sahaf, Houda ; Reguer, Alan ; Rochdi, Nabil ; Tonneau, Didier ; Bedu, Frederic ; Dallaporta, Hervé ; Jamgotchian, Haik</creatorcontrib><description>In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition (FIBID) technology. Our study demonstrates that the morphology of the synthesized nanowires is temperature and time dependent revealing a thermal gradient but also both vapor-liquid-solid and vapor-solid growth effects. Typical silicon nanowires dimensions are a length of 1 - 2   μ m and diameters of 30-40 nm. Structural characterization is performed by high resolution transmission electron microscopy using high energy electron transparent self-supported silicon nitride membranes. Electrical characteristics of FIBID- and self-connected nanowires are obtained. In both cases, they exhibit rectifying behavior.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3284940</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2010-01, Vol.107 (2), p.024310-024310-5</ispartof><rights>2010 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c318t-dcecd9c3499376094661ed327652a197b65d5e191e732f0c518369095b9f010f3</citedby><cites>FETCH-LOGICAL-c318t-dcecd9c3499376094661ed327652a197b65d5e191e732f0c518369095b9f010f3</cites><orcidid>0000-0001-8049-7595 ; 0009-0002-4924-8122 ; 0000-0002-7994-0825</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3284940$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00475814$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Abed, Hichem</creatorcontrib><creatorcontrib>Sahaf, Houda</creatorcontrib><creatorcontrib>Reguer, Alan</creatorcontrib><creatorcontrib>Rochdi, Nabil</creatorcontrib><creatorcontrib>Tonneau, Didier</creatorcontrib><creatorcontrib>Bedu, Frederic</creatorcontrib><creatorcontrib>Dallaporta, Hervé</creatorcontrib><creatorcontrib>Jamgotchian, Haik</creatorcontrib><title>Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization</title><title>Journal of applied physics</title><description>In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition (FIBID) technology. Our study demonstrates that the morphology of the synthesized nanowires is temperature and time dependent revealing a thermal gradient but also both vapor-liquid-solid and vapor-solid growth effects. Typical silicon nanowires dimensions are a length of 1 - 2   μ m and diameters of 30-40 nm. Structural characterization is performed by high resolution transmission electron microscopy using high energy electron transparent self-supported silicon nitride membranes. Electrical characteristics of FIBID- and self-connected nanowires are obtained. In both cases, they exhibit rectifying behavior.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kMFKAzEQhoMoWKsH3yBXD1tnNpvNxoNQilphwUP1HNJslka2WUlSpT69W1vqydMwwzfD_B8h1wgThJLd4oTlVSELOCEjhEpmgnM4JSOAHLNKCnlOLmJ8B0CsmBwRvXCdM72nXvv-ywUbadz6tLLRRTqMNY2b5dqZ0HtnaLJh7bzu7ugihY1Jm6A7qn1DbWdNCs4MrVnpoM1Aum-dXO8vyVmru2ivDnVM3h4fXmfzrH55ep5N68wwrFLWGGsaaVghJRMlyKIs0TYsFyXPNUqxLHnDLUq0guUtGD78X0qQfClbQGjZmNzs7650pz6CW-uwVb12aj6t1W4GUAheYfGJf-yQK8Zg2-MCgtp5VKgOHgf2fs9G49Jvov_hg0x1lKnilv0Avgl67Q</recordid><startdate>20100115</startdate><enddate>20100115</enddate><creator>Abed, Hichem</creator><creator>Sahaf, Houda</creator><creator>Reguer, Alan</creator><creator>Rochdi, Nabil</creator><creator>Tonneau, Didier</creator><creator>Bedu, Frederic</creator><creator>Dallaporta, Hervé</creator><creator>Jamgotchian, Haik</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-8049-7595</orcidid><orcidid>https://orcid.org/0009-0002-4924-8122</orcidid><orcidid>https://orcid.org/0000-0002-7994-0825</orcidid></search><sort><creationdate>20100115</creationdate><title>Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization</title><author>Abed, Hichem ; Sahaf, Houda ; Reguer, Alan ; Rochdi, Nabil ; Tonneau, Didier ; Bedu, Frederic ; Dallaporta, Hervé ; Jamgotchian, Haik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-dcecd9c3499376094661ed327652a197b65d5e191e732f0c518369095b9f010f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Abed, Hichem</creatorcontrib><creatorcontrib>Sahaf, Houda</creatorcontrib><creatorcontrib>Reguer, Alan</creatorcontrib><creatorcontrib>Rochdi, Nabil</creatorcontrib><creatorcontrib>Tonneau, Didier</creatorcontrib><creatorcontrib>Bedu, Frederic</creatorcontrib><creatorcontrib>Dallaporta, Hervé</creatorcontrib><creatorcontrib>Jamgotchian, Haik</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abed, Hichem</au><au>Sahaf, Houda</au><au>Reguer, Alan</au><au>Rochdi, Nabil</au><au>Tonneau, Didier</au><au>Bedu, Frederic</au><au>Dallaporta, Hervé</au><au>Jamgotchian, Haik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization</atitle><jtitle>Journal of applied physics</jtitle><date>2010-01-15</date><risdate>2010</risdate><volume>107</volume><issue>2</issue><spage>024310</spage><epage>024310-5</epage><pages>024310-024310-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition (FIBID) technology. Our study demonstrates that the morphology of the synthesized nanowires is temperature and time dependent revealing a thermal gradient but also both vapor-liquid-solid and vapor-solid growth effects. Typical silicon nanowires dimensions are a length of 1 - 2   μ m and diameters of 30-40 nm. Structural characterization is performed by high resolution transmission electron microscopy using high energy electron transparent self-supported silicon nitride membranes. Electrical characteristics of FIBID- and self-connected nanowires are obtained. In both cases, they exhibit rectifying behavior.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3284940</doi><orcidid>https://orcid.org/0000-0001-8049-7595</orcidid><orcidid>https://orcid.org/0009-0002-4924-8122</orcidid><orcidid>https://orcid.org/0000-0002-7994-0825</orcidid></addata></record>
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title Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T18%3A55%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Silicon%20nanowires%20synthesis%20on%20a%20submicronic%20terminal:%20Structural%20and%20electrical%20characterization&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Abed,%20Hichem&rft.date=2010-01-15&rft.volume=107&rft.issue=2&rft.spage=024310&rft.epage=024310-5&rft.pages=024310-024310-5&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.3284940&rft_dat=%3Chal_cross%3Eoai_HAL_hal_00475814v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true