Silicon ion implanted PMMA for soft electronics

Silicon ion implanted PMMA for soft electronics

The electrical conductivity and field-effect transconductance of polymethylmethacrylate (PMMA) subjected to implantation with 50 keV silicon ions at doses in the range from 10 14 to 10 17 ions/cm 2 were examined. The electrical response of Si +-implanted PMMA was studied by direct current (DC) and a...

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Veröffentlicht in:Organic electronics 2008-12, Vol.9 (6), p.1051-1060
Hauptverfasser: Hadjichristov, G.B., Gueorguiev, V.K., Ivanov, Tz.E., Marinov, Y.G., Ivanov, V.G., Faulques, E.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Condensed Matter
Electrical conductivity
Electrical properties
Electronics
Exact sciences and technology
Ion implanted polymers
Materials Science
Microelectronic fabrication (materials and surfaces technology)
Organic field-effect devices
Physics
Polymethylmethacrylate (PMMA)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:The electrical conductivity and field-effect transconductance of polymethylmethacrylate (PMMA) subjected to implantation with 50 keV silicon ions at doses in the range from 10 14 to 10 17 ions/cm 2 were examined. The electrical response of Si +-implanted PMMA was studied by direct current (DC) and alternating current (AC) measurements and was related to the structure formed in the host polymer. In addition to the sizable enhancement of the conductivity with the implantation dose, the field-effect transconductance found in Si +-implanted PMMA shows the potential of this material for soft-electronic applications.
ISSN:1566-1199
1878-5530
DOI:10.1016/j.orgel.2008.08.003