InGaN green light emitting diodes with deposited nanoparticles
We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in wh...
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| Veröffentlicht in: | Photonics and nanostructures 2007-10, Vol.5 (2), p.86-90 |
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| container_title | Photonics and nanostructures |
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| creator | Butun, Bayram Cesario, Jean Enoch, Stefan Quidant, Romain Ozbay, Ekmel |
| description | We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement. |
| doi_str_mv | 10.1016/j.photonics.2007.07.005 |
| format | Article |
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| ispartof | Photonics and nanostructures, 2007-10, Vol.5 (2), p.86-90 |
| issn | 1569-4410 1569-4429 |
| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Fourier modal method GaN General Physics InGaN Light-emitting diode (LED) MOCVD Nanoparticle Physics Plasmon Silver Surface plasmon |
| title | InGaN green light emitting diodes with deposited nanoparticles |
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