InGaN green light emitting diodes with deposited nanoparticles

InGaN green light emitting diodes with deposited nanoparticles

We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in wh...

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Veröffentlicht in:Photonics and nanostructures 2007-10, Vol.5 (2), p.86-90
Hauptverfasser: Butun, Bayram, Cesario, Jean, Enoch, Stefan, Quidant, Romain, Ozbay, Ekmel
Format: Artikel
Sprache:eng
Schlagworte:
Fourier modal method
GaN
General Physics
InGaN
Light-emitting diode (LED)
MOCVD
Nanoparticle
Physics
Plasmon
Silver
Surface plasmon
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Zusammenfassung:We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.
ISSN:1569-4410
1569-4429
DOI:10.1016/j.photonics.2007.07.005