Electrical transport phenomena in magnesium-doped p-type GaN

In this paper we present the resistivity and Hall‐effect measurements on p‐type GaN doped with Mg. The experiments were carried out as a function of hydrostatic pressure up to 1200 MPa in the temperature range 260–400 K. Both bulk GaN crystals as well as GaN:Mg epilayers were studied. In the investi...

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Veröffentlicht in:	Physica Status Solidi (b) 2009-03, Vol.246 (3), p.658-663
Hauptverfasser:	Konczewicz, Leszek, Litwin-Staszewska, Elżbieta, Contreras, Sylvie, Piotrzkowski, Ryszard, Dmowski, Lesław
Format:	Artikel
Sprache:	eng
Schlagworte:	62.50.−p 71.55.Eq 72.20.My 72.80.Ey Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Iii-v semiconductors Materials Science Physics
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Zusammenfassung:	In this paper we present the resistivity and Hall‐effect measurements on p‐type GaN doped with Mg. The experiments were carried out as a function of hydrostatic pressure up to 1200 MPa in the temperature range 260–400 K. Both bulk GaN crystals as well as GaN:Mg epilayers were studied. In the investigated samples the decrease of resistivity and increase of hole concentration under pressure was observed. Such a behavior, which is contrary to the n‐type material, strongly suggests a decrease of the ionization energy of Mg acceptor (Ea = 183 meV) with pressure. This shift is very weak, less than –2 meV/GPa. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	0370-1972 1521-3951
DOI:	10.1002/pssb.200880521