Characterization of anodic silicon oxide films grown in room temperature ionic liquids
The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and N- n-butyl- N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electroche...
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| Veröffentlicht in: | Electrochimica acta 2008-10, Vol.53 (25), p.7396-7402 |
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| container_title | Electrochimica acta |
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| creator | Fiorito, Pablo A. Alves, Wendel A. Bazito, Fernanda F.C. Haber, Fady El Froyer, Gerard de Torresi, Susana I. Córdoba Torresi, Roberto M. |
| description | The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and
N-
n-butyl-
N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electrochemical techniques and it was observed that the oxide growth follows a high-field mechanism. X-ray Photoelectron Spectroscopy experiments have shown that a non-stoichiometric oxide film was formed, related to the low water content present in both RTILs ( |
| doi_str_mv | 10.1016/j.electacta.2007.11.048 |
| format | Article |
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N-
n-butyl-
N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electrochemical techniques and it was observed that the oxide growth follows a high-field mechanism. X-ray Photoelectron Spectroscopy experiments have shown that a non-stoichiometric oxide film was formed, related to the low water content present in both RTILs (<30
ppm). The roughness values obtained by using AFM technique of the silicon surface after etching with HF was 1.5
nm (RMS). The electrochemical impedance spectroscopy at low frequencies range was interpreted as a resistance in parallel with a CPE element, the capacitance obtained was associated with the dielectric nature of the oxide formed and the resistance was interpreted considering the chemical dissolution of the oxide by the presence of the TFSI anion. The CPE element was associated with the surface roughness and the very thin oxide film obtained.</description><identifier>ISSN: 0013-4686</identifier><identifier>EISSN: 1873-3859</identifier><identifier>DOI: 10.1016/j.electacta.2007.11.048</identifier><identifier>CODEN: ELCAAV</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Chemistry ; Condensed Matter ; Electrochemical oxidation ; Electrochemistry ; Exact sciences and technology ; General and physical chemistry ; Impedance spectroscopy ; Ionic liquids ; Materials Science ; Physics ; Roughness ; Silicon oxide</subject><ispartof>Electrochimica acta, 2008-10, Vol.53 (25), p.7396-7402</ispartof><rights>2007 Elsevier Ltd</rights><rights>2008 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-abeed8357a82ddb85a1aa2b60bdcfd399fc2234062c1fc42b6cb929eb700c6a73</citedby><cites>FETCH-LOGICAL-c410t-abeed8357a82ddb85a1aa2b60bdcfd399fc2234062c1fc42b6cb929eb700c6a73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.electacta.2007.11.048$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,309,310,314,780,784,789,790,885,3549,23929,23930,25139,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20652428$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00396567$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Fiorito, Pablo A.</creatorcontrib><creatorcontrib>Alves, Wendel A.</creatorcontrib><creatorcontrib>Bazito, Fernanda F.C.</creatorcontrib><creatorcontrib>Haber, Fady El</creatorcontrib><creatorcontrib>Froyer, Gerard</creatorcontrib><creatorcontrib>de Torresi, Susana I. Córdoba</creatorcontrib><creatorcontrib>Torresi, Roberto M.</creatorcontrib><title>Characterization of anodic silicon oxide films grown in room temperature ionic liquids</title><title>Electrochimica acta</title><description>The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and
N-
n-butyl-
N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electrochemical techniques and it was observed that the oxide growth follows a high-field mechanism. X-ray Photoelectron Spectroscopy experiments have shown that a non-stoichiometric oxide film was formed, related to the low water content present in both RTILs (<30
ppm). The roughness values obtained by using AFM technique of the silicon surface after etching with HF was 1.5
nm (RMS). The electrochemical impedance spectroscopy at low frequencies range was interpreted as a resistance in parallel with a CPE element, the capacitance obtained was associated with the dielectric nature of the oxide formed and the resistance was interpreted considering the chemical dissolution of the oxide by the presence of the TFSI anion. The CPE element was associated with the surface roughness and the very thin oxide film obtained.</description><subject>Chemistry</subject><subject>Condensed Matter</subject><subject>Electrochemical oxidation</subject><subject>Electrochemistry</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Impedance spectroscopy</subject><subject>Ionic liquids</subject><subject>Materials Science</subject><subject>Physics</subject><subject>Roughness</subject><subject>Silicon oxide</subject><issn>0013-4686</issn><issn>1873-3859</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkMFq3DAQhkVpoNu0z1BdWujB7kiyZfu4LE1TWOilyVWMpXGjxbY2kjdt-vSV2bDXgkAw-r5_xM_YBwGlAKG_HEoayS6YTykBmlKIEqr2FduItlGFauvuNdsACFVUutVv2NuUDpBB3cCG3e8eMGaXov-Liw8zDwPHOThvefKjt-vkj3fEBz9Oif-K4ffM_cxjCBNfaDpSxOUUiWc3O6N_PHmX3rGrAcdE71_ua3Z38_Xn7rbY__j2fbfdF7YSsBTYE7lW1Q220rm-rVEgyl5D7-zgVNcNVkpVgZZWDLbKL7bvZEd9A2A1NuqafT7nPuBojtFPGJ9NQG9ut3uzzgBUp2vdPInMfjqzxxgeT5QWM_lkaRxxpnBKRuUvtSDW0OYM2hhSijRckgWYtXNzMJfOzdq5EcLkzrP58WUFJovjEHG2Pl10CbqWlVy57Zmj3M2Tp2iS9TRbcj7mXOOC_--uf5ncnP0</recordid><startdate>20081030</startdate><enddate>20081030</enddate><creator>Fiorito, Pablo A.</creator><creator>Alves, Wendel A.</creator><creator>Bazito, Fernanda F.C.</creator><creator>Haber, Fady El</creator><creator>Froyer, Gerard</creator><creator>de Torresi, Susana I. Córdoba</creator><creator>Torresi, Roberto M.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope></search><sort><creationdate>20081030</creationdate><title>Characterization of anodic silicon oxide films grown in room temperature ionic liquids</title><author>Fiorito, Pablo A. ; Alves, Wendel A. ; Bazito, Fernanda F.C. ; Haber, Fady El ; Froyer, Gerard ; de Torresi, Susana I. Córdoba ; Torresi, Roberto M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-abeed8357a82ddb85a1aa2b60bdcfd399fc2234062c1fc42b6cb929eb700c6a73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Chemistry</topic><topic>Condensed Matter</topic><topic>Electrochemical oxidation</topic><topic>Electrochemistry</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Impedance spectroscopy</topic><topic>Ionic liquids</topic><topic>Materials Science</topic><topic>Physics</topic><topic>Roughness</topic><topic>Silicon oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fiorito, Pablo A.</creatorcontrib><creatorcontrib>Alves, Wendel A.</creatorcontrib><creatorcontrib>Bazito, Fernanda F.C.</creatorcontrib><creatorcontrib>Haber, Fady El</creatorcontrib><creatorcontrib>Froyer, Gerard</creatorcontrib><creatorcontrib>de Torresi, Susana I. Córdoba</creatorcontrib><creatorcontrib>Torresi, Roberto M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Electrochimica acta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fiorito, Pablo A.</au><au>Alves, Wendel A.</au><au>Bazito, Fernanda F.C.</au><au>Haber, Fady El</au><au>Froyer, Gerard</au><au>de Torresi, Susana I. Córdoba</au><au>Torresi, Roberto M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of anodic silicon oxide films grown in room temperature ionic liquids</atitle><jtitle>Electrochimica acta</jtitle><date>2008-10-30</date><risdate>2008</risdate><volume>53</volume><issue>25</issue><spage>7396</spage><epage>7402</epage><pages>7396-7402</pages><issn>0013-4686</issn><eissn>1873-3859</eissn><coden>ELCAAV</coden><abstract>The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and
N-
n-butyl-
N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electrochemical techniques and it was observed that the oxide growth follows a high-field mechanism. X-ray Photoelectron Spectroscopy experiments have shown that a non-stoichiometric oxide film was formed, related to the low water content present in both RTILs (<30
ppm). The roughness values obtained by using AFM technique of the silicon surface after etching with HF was 1.5
nm (RMS). The electrochemical impedance spectroscopy at low frequencies range was interpreted as a resistance in parallel with a CPE element, the capacitance obtained was associated with the dielectric nature of the oxide formed and the resistance was interpreted considering the chemical dissolution of the oxide by the presence of the TFSI anion. The CPE element was associated with the surface roughness and the very thin oxide film obtained.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.electacta.2007.11.048</doi><tpages>7</tpages></addata></record> |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Chemistry Condensed Matter Electrochemical oxidation Electrochemistry Exact sciences and technology General and physical chemistry Impedance spectroscopy Ionic liquids Materials Science Physics Roughness Silicon oxide |
| title | Characterization of anodic silicon oxide films grown in room temperature ionic liquids |
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