Characterization of anodic silicon oxide films grown in room temperature ionic liquids

Characterization of anodic silicon oxide films grown in room temperature ionic liquids

The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and N- n-butyl- N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electroche...

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Veröffentlicht in:Electrochimica acta 2008-10, Vol.53 (25), p.7396-7402
Hauptverfasser: Fiorito, Pablo A., Alves, Wendel A., Bazito, Fernanda F.C., Haber, Fady El, Froyer, Gerard, de Torresi, Susana I. Córdoba, Torresi, Roberto M.
Format: Artikel
Sprache:eng
Schlagworte:
Chemistry
Condensed Matter
Electrochemical oxidation
Electrochemistry
Exact sciences and technology
General and physical chemistry
Impedance spectroscopy
Ionic liquids
Materials Science
Physics
Roughness
Silicon oxide
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Zusammenfassung:The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and N- n-butyl- N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electrochemical techniques and it was observed that the oxide growth follows a high-field mechanism. X-ray Photoelectron Spectroscopy experiments have shown that a non-stoichiometric oxide film was formed, related to the low water content present in both RTILs (
ISSN:0013-4686
1873-3859
DOI:10.1016/j.electacta.2007.11.048