Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons

A resist‐less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer‐scale planar device in ultrathin graphitic disks is demonstrated by producing 50‐nm‐wide double side‐gated transistor devices (see image). Experiments and theory suggest that the beh...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2008-06, Vol.4 (6), p.716-720
Hauptverfasser:	Dayen, Jean-François, Mahmood, Ather, Golubev, Dmitry S., Roch-Jeune, Isabelle, Salles, Philippe, Dujardin, Erik
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences field-effect transistors graphene Graphite - chemistry Ions lithography Micro and nanotechnologies Microelectronics Microscopy, Atomic Force Microscopy, Electron, Scanning Nanostructures organic electronics Temperature
Online-Zugang:	Volltext
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