Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons

Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons

A resist‐less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer‐scale planar device in ultrathin graphitic disks is demonstrated by producing 50‐nm‐wide double side‐gated transistor devices (see image). Experiments and theory suggest that the beh...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2008-06, Vol.4 (6), p.716-720
Hauptverfasser: Dayen, Jean-François, Mahmood, Ather, Golubev, Dmitry S., Roch-Jeune, Isabelle, Salles, Philippe, Dujardin, Erik
Format: Artikel
Sprache:eng
Schlagworte:
Engineering Sciences
field-effect transistors
graphene
Graphite - chemistry
Ions
lithography
Micro and nanotechnologies
Microelectronics
Microscopy, Atomic Force
Microscopy, Electron, Scanning
Nanostructures
organic electronics
Temperature
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A resist‐less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer‐scale planar device in ultrathin graphitic disks is demonstrated by producing 50‐nm‐wide double side‐gated transistor devices (see image). Experiments and theory suggest that the behavior of the nanoribbons can be interpreted as a Coulomb blockade in a linear array of tunnel junctions between graphene islands.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.200700913