Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons
A resist‐less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer‐scale planar device in ultrathin graphitic disks is demonstrated by producing 50‐nm‐wide double side‐gated transistor devices (see image). Experiments and theory suggest that the beh...
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| Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2008-06, Vol.4 (6), p.716-720 |
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| container_title | Small (Weinheim an der Bergstrasse, Germany) |
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| creator | Dayen, Jean-François Mahmood, Ather Golubev, Dmitry S. Roch-Jeune, Isabelle Salles, Philippe Dujardin, Erik |
| description | A resist‐less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer‐scale planar device in ultrathin graphitic disks is demonstrated by producing 50‐nm‐wide double side‐gated transistor devices (see image). Experiments and theory suggest that the behavior of the nanoribbons can be interpreted as a Coulomb blockade in a linear array of tunnel junctions between graphene islands. |
| doi_str_mv | 10.1002/smll.200700913 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00360027v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>69353831</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4863-86569dc48eaba896551250bfc008b50583cfd620b842c70146b96f157bf839763</originalsourceid><addsrcrecordid>eNqFkUtP3DAUhS1EBZR22yWaFRILT_2IX0uKmAE1Q1UBqtSNZSeOMHXiwU7azr9vphlNu2PlY-s7R_f6APABozlGiHzMbQhzgpBASGF6AE4wxxRySdThXmN0DN7m_IwQxaQQR-AYy4IJSskJeLz3tYNL07t69pBMl9cx9TPfzRaxGrKr4W3s4CdnWrgwNvnqL7gaQu-D2bg0XpbJrJ9c52Z3povJWxu7_A68aUzI7v3uPAWPi-uHqxtYflneXl2WsCokp1ByxlU9ameskYozhglDtqkQkpYhJmnV1JwgKwtSCYQLbhVvMBO2kVQJTk_BxZT7ZIJeJ9-atNHReH1zWert27gyH79J_MQjez6x6xRfBpd73fpcuRBM5-KQNVeUUUlfBynlmJBiC84nsEox5-Sa_QgY6W07etuO3rczGs52yYNtXf0P39UxAmoCfvngNq_E6ftVWf4fDievz737vfea9ENzQQXT3-6WelF-_6xWiuqv9A8z3KjZ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>33612241</pqid></control><display><type>article</type><title>Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons</title><source>MEDLINE</source><source>Wiley Online Library Journals Frontfile Complete</source><creator>Dayen, Jean-François ; Mahmood, Ather ; Golubev, Dmitry S. ; Roch-Jeune, Isabelle ; Salles, Philippe ; Dujardin, Erik</creator><creatorcontrib>Dayen, Jean-François ; Mahmood, Ather ; Golubev, Dmitry S. ; Roch-Jeune, Isabelle ; Salles, Philippe ; Dujardin, Erik</creatorcontrib><description>A resist‐less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer‐scale planar device in ultrathin graphitic disks is demonstrated by producing 50‐nm‐wide double side‐gated transistor devices (see image). Experiments and theory suggest that the behavior of the nanoribbons can be interpreted as a Coulomb blockade in a linear array of tunnel junctions between graphene islands.</description><identifier>ISSN: 1613-6810</identifier><identifier>EISSN: 1613-6829</identifier><identifier>DOI: 10.1002/smll.200700913</identifier><identifier>PMID: 18457332</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Engineering Sciences ; field-effect transistors ; graphene ; Graphite - chemistry ; Ions ; lithography ; Micro and nanotechnologies ; Microelectronics ; Microscopy, Atomic Force ; Microscopy, Electron, Scanning ; Nanostructures ; organic electronics ; Temperature</subject><ispartof>Small (Weinheim an der Bergstrasse, Germany), 2008-06, Vol.4 (6), p.716-720</ispartof><rights>Copyright © 2008 Wiley‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4863-86569dc48eaba896551250bfc008b50583cfd620b842c70146b96f157bf839763</citedby><cites>FETCH-LOGICAL-c4863-86569dc48eaba896551250bfc008b50583cfd620b842c70146b96f157bf839763</cites><orcidid>0000-0002-4443-8894 ; 0000-0001-7242-9250</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsmll.200700913$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsmll.200700913$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>230,314,776,780,881,1411,27901,27902,45550,45551</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/18457332$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00360027$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Dayen, Jean-François</creatorcontrib><creatorcontrib>Mahmood, Ather</creatorcontrib><creatorcontrib>Golubev, Dmitry S.</creatorcontrib><creatorcontrib>Roch-Jeune, Isabelle</creatorcontrib><creatorcontrib>Salles, Philippe</creatorcontrib><creatorcontrib>Dujardin, Erik</creatorcontrib><title>Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons</title><title>Small (Weinheim an der Bergstrasse, Germany)</title><addtitle>Small</addtitle><description>A resist‐less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer‐scale planar device in ultrathin graphitic disks is demonstrated by producing 50‐nm‐wide double side‐gated transistor devices (see image). Experiments and theory suggest that the behavior of the nanoribbons can be interpreted as a Coulomb blockade in a linear array of tunnel junctions between graphene islands.</description><subject>Engineering Sciences</subject><subject>field-effect transistors</subject><subject>graphene</subject><subject>Graphite - chemistry</subject><subject>Ions</subject><subject>lithography</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Microscopy, Atomic Force</subject><subject>Microscopy, Electron, Scanning</subject><subject>Nanostructures</subject><subject>organic electronics</subject><subject>Temperature</subject><issn>1613-6810</issn><issn>1613-6829</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNqFkUtP3DAUhS1EBZR22yWaFRILT_2IX0uKmAE1Q1UBqtSNZSeOMHXiwU7azr9vphlNu2PlY-s7R_f6APABozlGiHzMbQhzgpBASGF6AE4wxxRySdThXmN0DN7m_IwQxaQQR-AYy4IJSskJeLz3tYNL07t69pBMl9cx9TPfzRaxGrKr4W3s4CdnWrgwNvnqL7gaQu-D2bg0XpbJrJ9c52Z3povJWxu7_A68aUzI7v3uPAWPi-uHqxtYflneXl2WsCokp1ByxlU9ameskYozhglDtqkQkpYhJmnV1JwgKwtSCYQLbhVvMBO2kVQJTk_BxZT7ZIJeJ9-atNHReH1zWert27gyH79J_MQjez6x6xRfBpd73fpcuRBM5-KQNVeUUUlfBynlmJBiC84nsEox5-Sa_QgY6W07etuO3rczGs52yYNtXf0P39UxAmoCfvngNq_E6ftVWf4fDievz737vfea9ENzQQXT3-6WelF-_6xWiuqv9A8z3KjZ</recordid><startdate>200806</startdate><enddate>200806</enddate><creator>Dayen, Jean-François</creator><creator>Mahmood, Ather</creator><creator>Golubev, Dmitry S.</creator><creator>Roch-Jeune, Isabelle</creator><creator>Salles, Philippe</creator><creator>Dujardin, Erik</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH Verlag</general><scope>BSCLL</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-4443-8894</orcidid><orcidid>https://orcid.org/0000-0001-7242-9250</orcidid></search><sort><creationdate>200806</creationdate><title>Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons</title><author>Dayen, Jean-François ; Mahmood, Ather ; Golubev, Dmitry S. ; Roch-Jeune, Isabelle ; Salles, Philippe ; Dujardin, Erik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4863-86569dc48eaba896551250bfc008b50583cfd620b842c70146b96f157bf839763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Engineering Sciences</topic><topic>field-effect transistors</topic><topic>graphene</topic><topic>Graphite - chemistry</topic><topic>Ions</topic><topic>lithography</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Microscopy, Atomic Force</topic><topic>Microscopy, Electron, Scanning</topic><topic>Nanostructures</topic><topic>organic electronics</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dayen, Jean-François</creatorcontrib><creatorcontrib>Mahmood, Ather</creatorcontrib><creatorcontrib>Golubev, Dmitry S.</creatorcontrib><creatorcontrib>Roch-Jeune, Isabelle</creatorcontrib><creatorcontrib>Salles, Philippe</creatorcontrib><creatorcontrib>Dujardin, Erik</creatorcontrib><collection>Istex</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Small (Weinheim an der Bergstrasse, Germany)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dayen, Jean-François</au><au>Mahmood, Ather</au><au>Golubev, Dmitry S.</au><au>Roch-Jeune, Isabelle</au><au>Salles, Philippe</au><au>Dujardin, Erik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons</atitle><jtitle>Small (Weinheim an der Bergstrasse, Germany)</jtitle><addtitle>Small</addtitle><date>2008-06</date><risdate>2008</risdate><volume>4</volume><issue>6</issue><spage>716</spage><epage>720</epage><pages>716-720</pages><issn>1613-6810</issn><eissn>1613-6829</eissn><abstract>A resist‐less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer‐scale planar device in ultrathin graphitic disks is demonstrated by producing 50‐nm‐wide double side‐gated transistor devices (see image). Experiments and theory suggest that the behavior of the nanoribbons can be interpreted as a Coulomb blockade in a linear array of tunnel junctions between graphene islands.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><pmid>18457332</pmid><doi>10.1002/smll.200700913</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-4443-8894</orcidid><orcidid>https://orcid.org/0000-0001-7242-9250</orcidid><oa>free_for_read</oa></addata></record> |
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| source | MEDLINE; Wiley Online Library Journals Frontfile Complete |
| subjects | Engineering Sciences field-effect transistors graphene Graphite - chemistry Ions lithography Micro and nanotechnologies Microelectronics Microscopy, Atomic Force Microscopy, Electron, Scanning Nanostructures organic electronics Temperature |
| title | Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T20%3A02%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Side-Gated%20Transport%20in%20Focused-Ion-Beam-Fabricated%20Multilayered%20Graphene%20Nanoribbons&rft.jtitle=Small%20(Weinheim%20an%20der%20Bergstrasse,%20Germany)&rft.au=Dayen,%20Jean-Fran%C3%A7ois&rft.date=2008-06&rft.volume=4&rft.issue=6&rft.spage=716&rft.epage=720&rft.pages=716-720&rft.issn=1613-6810&rft.eissn=1613-6829&rft_id=info:doi/10.1002/smll.200700913&rft_dat=%3Cproquest_hal_p%3E69353831%3C/proquest_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=33612241&rft_id=info:pmid/18457332&rfr_iscdi=true |