First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate
The first results obtained from AlGaN/GaN HEMT devices on MBE epitaxial structures grown on `composite'substrates are presented. These substrates are based on innovative structures in which a thin Si single crystal layer is transferred on top of a thick polycrystalline SiC wafer. The fabricatio...
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| Veröffentlicht in: | Electronics letters 2008-01, Vol.44 (3), p.238-239 |
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| container_title | Electronics letters |
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| creator | Hoel, V. Defrance, N. De Jaeger, J.C. Gerard, H. Gaquiere, C. Lahreche, H. Langer, R. Wilk, A. Lijadi, M. Delage, S. |
| description | The first results obtained from AlGaN/GaN HEMT devices on MBE epitaxial structures grown on `composite'substrates are presented. These substrates are based on innovative structures in which a thin Si single crystal layer is transferred on top of a thick polycrystalline SiC wafer. The fabrication of the transistors is based on a process flow close to those used on epitaxy on Si bulk substrates. The results show the capabilities of such composite devices, providing HEMT devices for microwave power applications. |
| doi_str_mv | 10.1049/el:20083258 |
| format | Article |
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| ispartof | Electronics letters, 2008-01, Vol.44 (3), p.238-239 |
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| title | First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate |
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