First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate

The first results obtained from AlGaN/GaN HEMT devices on MBE epitaxial structures grown on `composite'substrates are presented. These substrates are based on innovative structures in which a thin Si single crystal layer is transferred on top of a thick polycrystalline SiC wafer. The fabrication of the transistors is based on a process flow close to those used on epitaxy on Si bulk substrates. The results show the capabilities of such composite devices, providing HEMT devices for microwave power applications.