Strong spin-orbit interactions and weak antilocalization in carbon-doped p-type GaAs/AlxGa1−xAs heterostructures

We present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin–orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: abeating in the...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2008-03, Vol.77 (12)
Hauptverfasser: Grbic, B., Leturcq, R., Ihn, T., Ensslin, K., Reuter, D., Wieck, A.D.
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Sprache:eng
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Zusammenfassung:We present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin–orbit interaction effects. The following signatures of exceptionally strong spin-orbit interactions are simultaneously observed: abeating in the Shubnikov-de Haas oscillations, a classical positive magnetoresistance due to the presence of the two spin-split subbands, and a weak anti-localization dip in the magnetoresistance. The spin-orbit induced splitting of the heavy hole subband at the Fermi level is determined to bearound 30 % of the total Fermi energy. The phase coherence length of holes of around 2.5 µm at a temperature of 70 mK, extracted from weak anti-localization measurements, is promissing for the fabrication of phase-coherent p-type nanodevices
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.77.125312