A new static method for measuring minority carrier lifetime
The paper describes the theory of a new static lifetime measurement, carried out by means of potential probes in the vicinity of a current-carrying contact on a high-lifetime semiconductor, with and without traps. It is based on recognition of the fact that, in the presence of minority carrier injec...
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| Veröffentlicht in: | Journal of applied physics 1983-01, Vol.54 (9), p.5158-5160 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
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| container_end_page | 5160 |
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| container_issue | 9 |
| container_start_page | 5158 |
| container_title | Journal of applied physics |
| container_volume | 54 |
| creator | MANIFACIER, J.-C MOREAU, Y HENISCH, H. K |
| description | The paper describes the theory of a new static lifetime measurement, carried out by means of potential probes in the vicinity of a current-carrying contact on a high-lifetime semiconductor, with and without traps. It is based on recognition of the fact that, in the presence of minority carrier injection, a uniform field is obtained only for a particular current density, and that depends directly on the carrier lifetime. |
| doi_str_mv | 10.1063/1.332740 |
| format | Article |
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K</creatorcontrib><title>A new static method for measuring minority carrier lifetime</title><title>Journal of applied physics</title><description>The paper describes the theory of a new static lifetime measurement, carried out by means of potential probes in the vicinity of a current-carrying contact on a high-lifetime semiconductor, with and without traps. 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It is based on recognition of the fact that, in the presence of minority carrier injection, a uniform field is obtained only for a particular current density, and that depends directly on the carrier lifetime.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.332740</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1983-01, Vol.54 (9), p.5158-5160 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00323213v1 |
| source | AIP Digital Archive |
| subjects | Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Electronics Engineering Sciences Exact sciences and technology Physics |
| title | A new static method for measuring minority carrier lifetime |
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