A new static method for measuring minority carrier lifetime

The paper describes the theory of a new static lifetime measurement, carried out by means of potential probes in the vicinity of a current-carrying contact on a high-lifetime semiconductor, with and without traps. It is based on recognition of the fact that, in the presence of minority carrier injec...

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Veröffentlicht in:	Journal of applied physics 1983-01, Vol.54 (9), p.5158-5160
Hauptverfasser:	MANIFACIER, J.-C, MOREAU, Y, HENISCH, H. K
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Electronics Engineering Sciences Exact sciences and technology Physics
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Beschreibung
Zusammenfassung:	The paper describes the theory of a new static lifetime measurement, carried out by means of potential probes in the vicinity of a current-carrying contact on a high-lifetime semiconductor, with and without traps. It is based on recognition of the fact that, in the presence of minority carrier injection, a uniform field is obtained only for a particular current density, and that depends directly on the carrier lifetime.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.332740