Transport parameters of hot electrons in GaAs at 300 K

Transport parameters of hot electrons in GaAs at 300 K

We present noise and conductivity measurements of electrons in GaAs at 300 K in the frequency range 220 MHz - 10 GHz. The noise is white. Partition noise is shown to occur above 2 KV/cm. The diffusion coefficient is given, versus the electric field, up to 3 KV/cm. It is shown that the Γ-L intervalle...

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Veröffentlicht in:Physica B + C 1985-01, Vol.134 (1), p.264-268
Hauptverfasser: Gasquet, D., de Murcia, M., Nougier, J.P., Gontrand, C.
Format: Artikel
Sprache:eng
Schlagworte:
Electronics
Engineering Sciences
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Zusammenfassung:We present noise and conductivity measurements of electrons in GaAs at 300 K in the frequency range 220 MHz - 10 GHz. The noise is white. Partition noise is shown to occur above 2 KV/cm. The diffusion coefficient is given, versus the electric field, up to 3 KV/cm. It is shown that the Γ-L intervalley coupling constant Ξ ΓL could be determined using the experimental curve D(E).
ISSN:0378-4363
DOI:10.1016/0378-4363(85)90353-5