Thermodynamical calculations on the chemical vapour transport of silicon carbide

We have performed thermodynamical calculations in order to oversee the potential of a new method for growing silicon carbide: the chemical vapour transport process. In this way we have been able to select possible transporting agents and to show the nature of the deposits with varying parameters.

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1999-07, Vol.61, p.98-101
Hauptverfasser: Chaussende, D, Monteil, Y, Aboughe-nze, P, Brylinski, C, Bouix, J
Format: Artikel
Sprache:eng
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Zusammenfassung:We have performed thermodynamical calculations in order to oversee the potential of a new method for growing silicon carbide: the chemical vapour transport process. In this way we have been able to select possible transporting agents and to show the nature of the deposits with varying parameters.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(98)00454-1