Thermodynamical calculations on the chemical vapour transport of silicon carbide
We have performed thermodynamical calculations in order to oversee the potential of a new method for growing silicon carbide: the chemical vapour transport process. In this way we have been able to select possible transporting agents and to show the nature of the deposits with varying parameters.
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Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1999-07, Vol.61, p.98-101 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We have performed thermodynamical calculations in order to oversee the potential of a new method for growing silicon carbide: the chemical vapour transport process. In this way we have been able to select possible transporting agents and to show the nature of the deposits with varying parameters. |
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ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/S0921-5107(98)00454-1 |