Modeling of Strained CMOS on Disposable SiGe Dots: Strain Impacts on Devices' Electrical Characteristics

We proposed a new nonplanar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts' relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress, both from the underlaying SiGe 3-D islands and from the s...

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Veröffentlicht in:IEEE transactions on electron devices 2007-09, Vol.54 (9), p.2321-2326
Hauptverfasser: Fregonese, S., Yan Zhuang, Burghartz, J.N.
Format: Artikel
Sprache:eng
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Zusammenfassung:We proposed a new nonplanar disposable SiGe dot (d-Dot) MOSFET based on Si-on-nothing technology. The new device concepts' relies on self-assembled single-crystalline d-Dot. The d-Dot MOSFET is prone to a particularly high strain/stress, both from the underlaying SiGe 3-D islands and from the stressed capping layers. We show that more than 80% and 50% higher mobilities of holes and electrons, respectively, can be obtained, as indicated by 3-D simulations performed throughout the entire fabrication process. Significant improvements in drive currents, transit frequencies, and the short channel effects are demonstrated using 2-D device simulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.902719