Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

We report a comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts in terms of contact resistivity, thermal stability, depth profile, and surface morphology. The metals were deposited by conventional electron-beam evaporation, and then annealed at 900 degree C for 30 s in a N sub(2) atmosphere. The lowest value for the specific contact resistivity was obtained using Ti/Al/Ni/Au metallization. Ti/Al/Ni /Au contacts showed no increase in contact resistivity after aging for five days at 600 degree C in an air atmosphere. Examination of the surface morphology using atomic force microscopy revealed that the surface roughness was clearly better in the case of Ti/Al/Ni/Au contacts. X-ray photoelectron spectroscopy was also employed and gave primary results of Ti/Al/Ni/Au contact formation.