CBr4 and be heavily doped InGaAs grown in a production MBE system

Carbon doping of In0.53Ga0.47As has been investigated in a production molecular beam epitaxy (MBE) system equipped with a CBr4 gas line. Growth temperature and As4 flux effects on surface morphology and efficiency of carbon doping are studied. Hole concentrations from 1.7X1017 to 1.3X1020cm-3 have b...

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Veröffentlicht in:	Journal of crystal growth 2005-05, Vol.278 (1-4), p.600-603
Hauptverfasser:	GODEYA, S, DHELLEMMES, S, WILK, A, ZAKNOUNE, M, MOLLOT, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Zusammenfassung:	Carbon doping of In0.53Ga0.47As has been investigated in a production molecular beam epitaxy (MBE) system equipped with a CBr4 gas line. Growth temperature and As4 flux effects on surface morphology and efficiency of carbon doping are studied. Hole concentrations from 1.7X1017 to 1.3X1020cm-3 have been obtained. A first set of samples shows no significant difference in mobility for comparable beryllium- and carbon-doping levels either in solid source production (Riber MBE49) or in gas source research (Riber MBE32) systems. Best results for carbon doping are obtained with a low As4 flux and a growth temperature in the 400-425 deg C range. A nearly ideal emitter-base I(V) characteristic has been obtained for a doping level of 8X1019cm-3, which is promising for high-frequency InP-based HBTs issue.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2004.12.075