Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx
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| Veröffentlicht in: | Journal of non-crystalline solids 2001, Vol.280, p.69-77 |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 77 |
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| container_issue | |
| container_start_page | 69 |
| container_title | Journal of non-crystalline solids |
| container_volume | 280 |
| creator | Pic, N. Glachant, A. Nitsche, S. Hoarau, J.Y. Goguenheim, D. Vuillaume, D. Sibai, A. Autran, Jean-Luc |
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| format | Article |
| fullrecord | <record><control><sourceid>hal</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00152161v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_00152161v1</sourcerecordid><originalsourceid>FETCH-hal_primary_oai_HAL_hal_00152161v13</originalsourceid><addsrcrecordid>eNqVjLkOwjAQRF2AxPkP21IEOY7C1SEOpUCigD4yYQMLPiLb4vh7Egk-gGlGmnkzLdblXIgo4fOkw3re33itaTLrMrvGgE6TkYGsAVtCuCKgwiI4KqSCytkKXSD0TSnGqdE1QsUdPCkqrIlO0uMZzvQbQUlKe1g0T05Lpd5wcfZp4ED714C1S6k8Dr_eZ6Pt5rjKoqtUeeVIS_fOraQ8W-7yJuM8TkU8iR9x8g_7AW2sTU0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Pic, N. ; Glachant, A. ; Nitsche, S. ; Hoarau, J.Y. ; Goguenheim, D. ; Vuillaume, D. ; Sibai, A. ; Autran, Jean-Luc</creator><creatorcontrib>Pic, N. ; Glachant, A. ; Nitsche, S. ; Hoarau, J.Y. ; Goguenheim, D. ; Vuillaume, D. ; Sibai, A. ; Autran, Jean-Luc</creatorcontrib><identifier>ISSN: 0022-3093</identifier><language>eng</language><publisher>Elsevier</publisher><ispartof>Journal of non-crystalline solids, 2001, Vol.280, p.69-77</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-9893-014X ; 0000-0001-9893-014X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,4010</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00152161$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Pic, N.</creatorcontrib><creatorcontrib>Glachant, A.</creatorcontrib><creatorcontrib>Nitsche, S.</creatorcontrib><creatorcontrib>Hoarau, J.Y.</creatorcontrib><creatorcontrib>Goguenheim, D.</creatorcontrib><creatorcontrib>Vuillaume, D.</creatorcontrib><creatorcontrib>Sibai, A.</creatorcontrib><creatorcontrib>Autran, Jean-Luc</creatorcontrib><title>Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx</title><title>Journal of non-crystalline solids</title><issn>0022-3093</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqVjLkOwjAQRF2AxPkP21IEOY7C1SEOpUCigD4yYQMLPiLb4vh7Egk-gGlGmnkzLdblXIgo4fOkw3re33itaTLrMrvGgE6TkYGsAVtCuCKgwiI4KqSCytkKXSD0TSnGqdE1QsUdPCkqrIlO0uMZzvQbQUlKe1g0T05Lpd5wcfZp4ED714C1S6k8Dr_eZ6Pt5rjKoqtUeeVIS_fOraQ8W-7yJuM8TkU8iR9x8g_7AW2sTU0</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Pic, N.</creator><creator>Glachant, A.</creator><creator>Nitsche, S.</creator><creator>Hoarau, J.Y.</creator><creator>Goguenheim, D.</creator><creator>Vuillaume, D.</creator><creator>Sibai, A.</creator><creator>Autran, Jean-Luc</creator><general>Elsevier</general><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-9893-014X</orcidid><orcidid>https://orcid.org/0000-0001-9893-014X</orcidid></search><sort><creationdate>2001</creationdate><title>Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx</title><author>Pic, N. ; Glachant, A. ; Nitsche, S. ; Hoarau, J.Y. ; Goguenheim, D. ; Vuillaume, D. ; Sibai, A. ; Autran, Jean-Luc</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-hal_primary_oai_HAL_hal_00152161v13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pic, N.</creatorcontrib><creatorcontrib>Glachant, A.</creatorcontrib><creatorcontrib>Nitsche, S.</creatorcontrib><creatorcontrib>Hoarau, J.Y.</creatorcontrib><creatorcontrib>Goguenheim, D.</creatorcontrib><creatorcontrib>Vuillaume, D.</creatorcontrib><creatorcontrib>Sibai, A.</creatorcontrib><creatorcontrib>Autran, Jean-Luc</creatorcontrib><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of non-crystalline solids</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pic, N.</au><au>Glachant, A.</au><au>Nitsche, S.</au><au>Hoarau, J.Y.</au><au>Goguenheim, D.</au><au>Vuillaume, D.</au><au>Sibai, A.</au><au>Autran, Jean-Luc</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx</atitle><jtitle>Journal of non-crystalline solids</jtitle><date>2001</date><risdate>2001</risdate><volume>280</volume><spage>69</spage><epage>77</epage><pages>69-77</pages><issn>0022-3093</issn><pub>Elsevier</pub><orcidid>https://orcid.org/0000-0001-9893-014X</orcidid><orcidid>https://orcid.org/0000-0001-9893-014X</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-3093 |
| ispartof | Journal of non-crystalline solids, 2001, Vol.280, p.69-77 |
| issn | 0022-3093 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00152161v1 |
| source | Elsevier ScienceDirect Journals Complete |
| title | Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T15%3A28%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Determination%20of%20the%20electrical%20properties%20of%202.5nm%20thick%20silicon-based%20dielectric%20films%20:%20thermally%20grown%20SiOx&rft.jtitle=Journal%20of%20non-crystalline%20solids&rft.au=Pic,%20N.&rft.date=2001&rft.volume=280&rft.spage=69&rft.epage=77&rft.pages=69-77&rft.issn=0022-3093&rft_id=info:doi/&rft_dat=%3Chal%3Eoai_HAL_hal_00152161v1%3C/hal%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |