Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
We measure the electron phase-coherence time τφ up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of τφ is quantitatively consistent with the two-dimensional model of electron-electron interactions in disordere...
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Veröffentlicht in: | Physical review. B, Condensed matter Condensed matter, 2002-12, Vol.66 (24), p.241305/1-4, Article 241305 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We measure the electron phase-coherence time τφ up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of τφ is quantitatively consistent with the two-dimensional model of electron-electron interactions in disordered systems. In our sample, τφ is two to four times larger than previously reported in GaAs quantum dots. We attribute this enhancement to a larger value of the Fermi energy and the lower electron effective mass in our sample. We also observe a distinct type of conductance fluctuation due to ballistic electron focusing inside the dot up to 204 K. |
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ISSN: | 0163-1829 1098-0121 1095-3795 1550-235X |
DOI: | 10.1103/PhysRevB.66.241305 |