Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot

We measure the electron phase-coherence time τφ up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of τφ is quantitatively consistent with the two-dimensional model of electron-electron interactions in disordere...

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Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 2002-12, Vol.66 (24), p.241305/1-4, Article 241305
Hauptverfasser: Hackens, B., Delfosse, F., Faniel, S., Gustin, C., Boutry, H., Wallart, X., Bollaert, S., Cappy, A., Bayot, V.
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Sprache:eng
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Zusammenfassung:We measure the electron phase-coherence time τφ up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of τφ is quantitatively consistent with the two-dimensional model of electron-electron interactions in disordered systems. In our sample, τφ is two to four times larger than previously reported in GaAs quantum dots. We attribute this enhancement to a larger value of the Fermi energy and the lower electron effective mass in our sample. We also observe a distinct type of conductance fluctuation due to ballistic electron focusing inside the dot up to 204 K.
ISSN:0163-1829
1098-0121
1095-3795
1550-235X
DOI:10.1103/PhysRevB.66.241305