Experimental evaluation of gate architecture influence on multi-gate Silicon On Insulator MOSFETs performance
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Veröffentlicht in: | IEEE transactions on electron devices 2005, Vol.52, p.1772-11779 |
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container_title | IEEE transactions on electron devices |
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creator | Widiez J. Lolivier M. Vinet T. Poiroux B. Previtali F. Daugé M. Mouis S. Deleonibus, J. |
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identifier | ISSN: 0018-9383 |
ispartof | IEEE transactions on electron devices, 2005, Vol.52, p.1772-11779 |
issn | 0018-9383 |
language | eng |
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source | IEEE Electronic Library (IEL) |
subjects | Engineering Sciences Micro and nanotechnologies Microelectronics |
title | Experimental evaluation of gate architecture influence on multi-gate Silicon On Insulator MOSFETs performance |
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