Molecular hydrogen formation in hydrogenated silicon nitride
Hydrogen is released from hydrogenated silicon nitride ( Si N x : H ) during thermal treatments. The formation of molecular hydrogen ( H 2 ) in Si N x : H layers with low mass density is confirmed by Raman spectroscopy. However, no H 2 is observed in layers with a high mass density despite clear evi...
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| Veröffentlicht in: | Applied physics letters 2006-11, Vol.89 (21), p.211914-211914-3 |
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| Sprache: | eng |
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| container_end_page | 211914-3 |
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| container_issue | 21 |
| container_start_page | 211914 |
| container_title | Applied physics letters |
| container_volume | 89 |
| creator | Dekkers, H. F. W. Beaucarne, G. Hiller, M. Charifi, H. Slaoui, A. |
| description | Hydrogen is released from hydrogenated silicon nitride
(
Si
N
x
:
H
)
during thermal treatments. The formation of molecular hydrogen
(
H
2
)
in
Si
N
x
:
H
layers with low mass density is confirmed by Raman spectroscopy. However, no
H
2
is observed in layers with a high mass density despite clear evidence that hydrogen diffuses through those layers. Therefore hydrogen migrates in those layers in a different form. This is consistent with the observed improvement of the hydrogen passivation of silicon substrates using thermally treated high density
Si
N
x
:
H
antireflection coatings. |
| doi_str_mv | 10.1063/1.2396900 |
| format | Article |
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(
Si
N
x
:
H
)
during thermal treatments. The formation of molecular hydrogen
(
H
2
)
in
Si
N
x
:
H
layers with low mass density is confirmed by Raman spectroscopy. However, no
H
2
is observed in layers with a high mass density despite clear evidence that hydrogen diffuses through those layers. Therefore hydrogen migrates in those layers in a different form. This is consistent with the observed improvement of the hydrogen passivation of silicon substrates using thermally treated high density
Si
N
x
:
H
antireflection coatings.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2396900</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2006-11, Vol.89 (21), p.211914-211914-3</ispartof><rights>2006 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-4b75ee099aa7d1883533bc9fae0ae0d3fed377165c6d847a3453926fc57a7c3</citedby><cites>FETCH-LOGICAL-c384t-4b75ee099aa7d1883533bc9fae0ae0d3fed377165c6d847a3453926fc57a7c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2396900$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76127,76133</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00131714$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Dekkers, H. F. W.</creatorcontrib><creatorcontrib>Beaucarne, G.</creatorcontrib><creatorcontrib>Hiller, M.</creatorcontrib><creatorcontrib>Charifi, H.</creatorcontrib><creatorcontrib>Slaoui, A.</creatorcontrib><title>Molecular hydrogen formation in hydrogenated silicon nitride</title><title>Applied physics letters</title><description>Hydrogen is released from hydrogenated silicon nitride
(
Si
N
x
:
H
)
during thermal treatments. The formation of molecular hydrogen
(
H
2
)
in
Si
N
x
:
H
layers with low mass density is confirmed by Raman spectroscopy. However, no
H
2
is observed in layers with a high mass density despite clear evidence that hydrogen diffuses through those layers. Therefore hydrogen migrates in those layers in a different form. This is consistent with the observed improvement of the hydrogen passivation of silicon substrates using thermally treated high density
Si
N
x
:
H
antireflection coatings.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp1kE1Lw0AQhhdRsFYP_oNcPaTOdLLZLIhQiloh4kHvy3Y_7EqayG4U-u9Nba0nYWCYl2cG5mHsEmGCUNI1TqYkSwlwxEYIQuSEWB2zEQBQXkqOp-wspfdh5FOiEbt56hpnPhsds9XGxu7NtZnv4lr3oWuz0B5S3TubpdAEM-Rt6GOw7pydeN0kd7HvY_Zyf_c6X-T188PjfFbnhqqiz4ul4M6BlFoLi1VFnGhppNcOhrLknSUhsOSmtFUhNBWc5LT0hgstDI3Z1e7qSjfqI4a1jhvV6aAWs1ptMwAkFFh84R9rYpdSdP6wgKC2ghSqvaCBvd2xyYT-59__4YMl9etDefoGZBVs_Q</recordid><startdate>20061120</startdate><enddate>20061120</enddate><creator>Dekkers, H. F. W.</creator><creator>Beaucarne, G.</creator><creator>Hiller, M.</creator><creator>Charifi, H.</creator><creator>Slaoui, A.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>20061120</creationdate><title>Molecular hydrogen formation in hydrogenated silicon nitride</title><author>Dekkers, H. F. W. ; Beaucarne, G. ; Hiller, M. ; Charifi, H. ; Slaoui, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-4b75ee099aa7d1883533bc9fae0ae0d3fed377165c6d847a3453926fc57a7c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dekkers, H. F. W.</creatorcontrib><creatorcontrib>Beaucarne, G.</creatorcontrib><creatorcontrib>Hiller, M.</creatorcontrib><creatorcontrib>Charifi, H.</creatorcontrib><creatorcontrib>Slaoui, A.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dekkers, H. F. W.</au><au>Beaucarne, G.</au><au>Hiller, M.</au><au>Charifi, H.</au><au>Slaoui, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molecular hydrogen formation in hydrogenated silicon nitride</atitle><jtitle>Applied physics letters</jtitle><date>2006-11-20</date><risdate>2006</risdate><volume>89</volume><issue>21</issue><spage>211914</spage><epage>211914-3</epage><pages>211914-211914-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Hydrogen is released from hydrogenated silicon nitride
(
Si
N
x
:
H
)
during thermal treatments. The formation of molecular hydrogen
(
H
2
)
in
Si
N
x
:
H
layers with low mass density is confirmed by Raman spectroscopy. However, no
H
2
is observed in layers with a high mass density despite clear evidence that hydrogen diffuses through those layers. Therefore hydrogen migrates in those layers in a different form. This is consistent with the observed improvement of the hydrogen passivation of silicon substrates using thermally treated high density
Si
N
x
:
H
antireflection coatings.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2396900</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2006-11, Vol.89 (21), p.211914-211914-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00131714v1 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Molecular hydrogen formation in hydrogenated silicon nitride |
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