Molecular hydrogen formation in hydrogenated silicon nitride

Hydrogen is released from hydrogenated silicon nitride ( Si N x : H ) during thermal treatments. The formation of molecular hydrogen ( H 2 ) in Si N x : H layers with low mass density is confirmed by Raman spectroscopy. However, no H 2 is observed in layers with a high mass density despite clear evi...

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Veröffentlicht in:Applied physics letters 2006-11, Vol.89 (21), p.211914-211914-3
Hauptverfasser: Dekkers, H. F. W., Beaucarne, G., Hiller, M., Charifi, H., Slaoui, A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Hydrogen is released from hydrogenated silicon nitride ( Si N x : H ) during thermal treatments. The formation of molecular hydrogen ( H 2 ) in Si N x : H layers with low mass density is confirmed by Raman spectroscopy. However, no H 2 is observed in layers with a high mass density despite clear evidence that hydrogen diffuses through those layers. Therefore hydrogen migrates in those layers in a different form. This is consistent with the observed improvement of the hydrogen passivation of silicon substrates using thermally treated high density Si N x : H antireflection coatings.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2396900