Molecular hydrogen formation in hydrogenated silicon nitride
Hydrogen is released from hydrogenated silicon nitride ( Si N x : H ) during thermal treatments. The formation of molecular hydrogen ( H 2 ) in Si N x : H layers with low mass density is confirmed by Raman spectroscopy. However, no H 2 is observed in layers with a high mass density despite clear evi...
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Veröffentlicht in: | Applied physics letters 2006-11, Vol.89 (21), p.211914-211914-3 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Hydrogen is released from hydrogenated silicon nitride
(
Si
N
x
:
H
)
during thermal treatments. The formation of molecular hydrogen
(
H
2
)
in
Si
N
x
:
H
layers with low mass density is confirmed by Raman spectroscopy. However, no
H
2
is observed in layers with a high mass density despite clear evidence that hydrogen diffuses through those layers. Therefore hydrogen migrates in those layers in a different form. This is consistent with the observed improvement of the hydrogen passivation of silicon substrates using thermally treated high density
Si
N
x
:
H
antireflection coatings. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2396900 |