An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications

In this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device...

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Veröffentlicht in:	IEEE electron device letters 2006-08, Vol.27 (8), p.681-683
Hauptverfasser:	BETHOUX, J.-M, HAPPY, H, DAMBRINE, G, DERYCKE, V, GOFFMAN, M, BOURGOIN, J.-P
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Engineering Sciences Exact sciences and technology Molecular electronics, nanoelectronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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