An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications

An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications

In this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device...

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Veröffentlicht in:IEEE electron device letters 2006-08, Vol.27 (8), p.681-683
Hauptverfasser: BETHOUX, J.-M, HAPPY, H, DAMBRINE, G, DERYCKE, V, GOFFMAN, M, BOURGOIN, J.-P
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Engineering Sciences
Exact sciences and technology
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Zusammenfassung:In this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H21|2) cutoff frequency (ft ) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivable
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.879042