Mechanisms and application of the Excimer laser doping from spin-on glass sources for USJ fabrication

In this work was investigated numerically and experimentally a simple laser doping method employing borosilicate (BSG) glass films as dopant sources which are deposited onto Si by the spin-coating technique. Both short (20 ns) and long (200 ns) pulse duration Excimer laser beams were used to deposit...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied surface science 2006-04, Vol.252 (13), p.4502-4505
Hauptverfasser: Coutanson, S., Fogarassy, E., Venturini, J.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this work was investigated numerically and experimentally a simple laser doping method employing borosilicate (BSG) glass films as dopant sources which are deposited onto Si by the spin-coating technique. Both short (20 ns) and long (200 ns) pulse duration Excimer laser beams were used to deposit a large amount of energy in short time onto the near-surface region. Under suitable conditions, the irradiation leads to surface melting and dopant incorporation by liquid phase diffusion from the surface. Boron distribution profiles in the two-pulse duration regimes were studied as well as their electrical properties, and the junction formation of less than 25 nm in depth was demonstrated.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2005.07.163