Magnetic properties of Fe clustering in GaSe epilayers on GaAs(1 1 1)B

Magnetic properties of Fe clustering in GaSe epilayers on GaAs(1 1 1)B

Ga1−xFexSe films have been grown on GaAs(111)B by molecular beam epitaxy. There is no evidence of iron compound formation and Fe aggregate atoms preferentially intercalate in the van der Waals gaps of the GaSe lamellar structure. Field-cooled and zero-field-cooled magnetization have shown an irrever...

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Veröffentlicht in:Journal of magnetism and magnetic materials 2004-05, Vol.272-276, p.1551-1553
Hauptverfasser: de Moraes, A.R., Mosca, D.H., Schreiner, W.H., Guimarães, J.L., de Oliveira, A.J.A., de Souza, P.E.N., Etgens, V.H., Eddrief, M.
Format: Artikel
Sprache:eng
Schlagworte:
Fe clusters
Lamellar GaSe semicondutor
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Zusammenfassung:Ga1−xFexSe films have been grown on GaAs(111)B by molecular beam epitaxy. There is no evidence of iron compound formation and Fe aggregate atoms preferentially intercalate in the van der Waals gaps of the GaSe lamellar structure. Field-cooled and zero-field-cooled magnetization have shown an irreversibility and superparamagnetic relaxation with blocking temperatures ranging from 120 to 137K, consistent with nanoscaled magnetic clusters.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2003.12.263