Characterization of rf sputtered TiOySz thin films
Different titanium oxysulfide thin films were prepared by rf magnetron sputtering using two types of targets in a pure argon or mixed oxygen/argon atmosphere with a total pressure of 1 or 0*2 Pa. We have studied the influence of the sputtering conditions (target, total pressure, oxygen partial press...
Gespeichert in:
Veröffentlicht in: | Thin solid films 2005-07, Vol.484 (1-2), p.113-123 |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Different titanium oxysulfide thin films were prepared by rf magnetron sputtering using two types of targets in a pure argon or mixed oxygen/argon atmosphere with a total pressure of 1 or 0*2 Pa. We have studied the influence of the sputtering conditions (target, total pressure, oxygen partial pressure) on the composition, the morphology and the local and electronic structure of our thin films. A set of complementary techniques (scanning electron microscopy, X--ray diffraction, transmission electron microscopy, X--ray photoelectron spectroscopy (XPS) and X--ray absorption spectroscopy (XAS)) was used to characterize the thin films. Two types of films have been obtained: thin films prepared from TiS2 target having a composition and a local structure close to TiS3 and thin films obtained from TiS2/TiS3 target characterized by a composition and a local structure close to TiS2. The complementary use of XPS and sulfur K--edge XAS spectroscopies has allowed us to evidence the coexistence of different microdomains into the thin films corresponding respectively to a pure sulfur, a pure oxygen or a mixed sulfur/oxygen environment. |
---|---|
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2005.02.014 |