Role of steps in deposition rate in silane chemical vapor deposition on Si(111)
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-02, Vol.71 (8), p.085314.1-085314.4, Article 085314 |
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| container_end_page | 085314.4 |
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| container_issue | 8 |
| container_start_page | 085314.1 |
| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 71 |
| creator | MASSON, L THIBAUDAU, F |
| description | |
| doi_str_mv | 10.1103/PhysRevB.71.085314 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2005-02, Vol.71 (8), p.085314.1-085314.4, Article 085314 |
| issn | 1098-0121 1550-235X |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00015224v1 |
| source | American Physical Society Journals |
| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Role of steps in deposition rate in silane chemical vapor deposition on Si(111) |
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