Role of steps in deposition rate in silane chemical vapor deposition on Si(111)

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Bibliographische Detailangaben
Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-02, Vol.71 (8), p.085314.1-085314.4, Article 085314
Hauptverfasser:	MASSON, L, THIBAUDAU, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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