Structure characterization of MBE-grown (Zn,Cr)Se layers

Cr-based diluted magnetic semiconductors (DMSs) have attracted a lot of attention within the last few years because of their possible applications in the area of spintronics. Modern growth techniques of such materials require efficient methods of characterization of their structure. In this work, the structure of Cr-rich ZnSe layers grown by MBE on (001) GaAs substrate was investigated by means of the high-resolution X-ray diffraction, atomic force microscopy and Raman scattering. Direct evidence of the mixed Zn1−xCrxSe crystal in the zinc-blende phase is demonstrated by the high resolution X-ray diffraction (a part of Cr is shown to occupy the cationic sites in the crystal lattice). The presence of amorphous or crystalline Se- and Cr-related precipitates in selected samples is demonstrated, their influence on the properties of (Zn,Cr)Se layers is discussed.