Electrical characterization of SOI pMOS device leakage

•Drain leakage currents down to a few fA have been measured thanks to a dedicated setup.•Leakage mechanism predominance region have been determined from temperature measurement (activation energy criteria).•Shockley-Read-Hall Field-Enhanced leakage is slightly dependent on silicon thickness and back...

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Veröffentlicht in:	Solid-state electronics 2023-10, Vol.208, p.108740, Article 108740
Hauptverfasser:	Bosch, D., Lheritier, P., Guyader, F., Joblot, S., Ponthenier, F., Lacord, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Drain leakage Engineering Sciences GIDL Micro and nanotechnologies Microelectronics pMOS SOI SRH
Online-Zugang:	Volltext
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