212-Gbit/s 2:1 multiplexing selector realised in InP DHBT
In this Letter, the authors report on the design, optimisation and electrical measurements of a new fully integrated multiplexing selector fabricated in 0.7-µm indium phosphide (InP) double-heterojunction bipolar transistor technology. All parts of the circuit were optimised to obtain 200-Gbit/s cla...
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| Veröffentlicht in: | Electronics letters 2019-03, Vol.55 (5), p.242-244 |
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| container_title | Electronics letters |
| container_volume | 55 |
| creator | Konczykowska, A Jorge, F Riet, M Nodjiadjim, V Duval, B Mardoyan, H Estaran, J.M Adamiecki, A Raybon, G Dupuy, J.-Y |
| description | In this Letter, the authors report on the design, optimisation and electrical measurements of a new fully integrated multiplexing selector fabricated in 0.7-µm indium phosphide (InP) double-heterojunction bipolar transistor technology. All parts of the circuit were optimised to obtain 200-Gbit/s class of operation. They present electrical performances at 140 and to a record speed of 212 Gbit/s, highlighting their respective measurement challenges. The power consumption of the circuit is 0.5 and 0.8 W for a differential output amplitude of 240 and 730 mV, respectively. This selector has been successfully used as modulator driver in optical transmission experiments up to 204 Gbit/s. |
| doi_str_mv | 10.1049/el.2018.7545 |
| format | Article |
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All parts of the circuit were optimised to obtain 200-Gbit/s class of operation. They present electrical performances at 140 and to a record speed of 212 Gbit/s, highlighting their respective measurement challenges. The power consumption of the circuit is 0.5 and 0.8 W for a differential output amplitude of 240 and 730 mV, respectively. This selector has been successfully used as modulator driver in optical transmission experiments up to 204 Gbit/s.</description><subject>bipolar integrated circuits</subject><subject>Circuits and systems</subject><subject>Engineering Sciences</subject><subject>fully integrated multiplexing selector</subject><subject>heterojunction bipolar transistors</subject><subject>III‐V semiconductors</subject><subject>indium compounds</subject><subject>indium phosphide double‐heterojunction bipolar transistor technology</subject><subject>InP</subject><subject>InP DHBT</subject><subject>modulator driver</subject><subject>multiplexing equipment</subject><subject>multiplexing selector</subject><subject>optical transmission</subject><subject>power 0.5 W</subject><subject>power 0.8 W</subject><subject>voltage 240.0 mV</subject><subject>voltage 730.0 mV</subject><issn>0013-5194</issn><issn>1350-911X</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp90E1Lw0AQBuBFFCy1N39ADh4UTLuzX9n1Vmu_IKCHCt6WbbLRlW1asqnaf29CRDwU5zKX5x2GF6FLwEPATI2sHxIMcphwxk9QDyjHsQJ4OUU9jIHGHBQ7R4MQ3BoDAyYwgx5SBEg8X7t6FCJyB9Fm72u38_bLla9RsN5m9baKKmu8CzaPXBkty6foYXG_ukBnhfHBDn52Hz3PpqvJIk4f58vJOI0zmiQy5owmkhJTZAAyp8IymRiVQ66oUCIrLOWES-AiU-3gREgi6VoWQhCcC0H76Ka7-2a83lVuY6qD3hqnF-NUZ9ZoTEAKlsAHNPa2s1m1DaGyxW8AsG5b0tbrtiXdttRw3vFP5-3hX6unaUruZ1iQ5rs-uupyztb6fbuvyqaARvzhu7xo2PURdvSTb6B2fYg</recordid><startdate>20190307</startdate><enddate>20190307</enddate><creator>Konczykowska, A</creator><creator>Jorge, F</creator><creator>Riet, M</creator><creator>Nodjiadjim, V</creator><creator>Duval, B</creator><creator>Mardoyan, H</creator><creator>Estaran, J.M</creator><creator>Adamiecki, A</creator><creator>Raybon, G</creator><creator>Dupuy, J.-Y</creator><general>The Institution of Engineering and Technology</general><general>IET</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>20190307</creationdate><title>212-Gbit/s 2:1 multiplexing selector realised in InP DHBT</title><author>Konczykowska, A ; Jorge, F ; Riet, M ; Nodjiadjim, V ; Duval, B ; Mardoyan, H ; Estaran, J.M ; Adamiecki, A ; Raybon, G ; Dupuy, J.-Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3778-5437832afc118d36e487a9d1d93696cfe35258156c999990768283b8f6620d663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>bipolar integrated circuits</topic><topic>Circuits and systems</topic><topic>Engineering Sciences</topic><topic>fully integrated multiplexing selector</topic><topic>heterojunction bipolar transistors</topic><topic>III‐V semiconductors</topic><topic>indium compounds</topic><topic>indium phosphide double‐heterojunction bipolar transistor technology</topic><topic>InP</topic><topic>InP DHBT</topic><topic>modulator driver</topic><topic>multiplexing equipment</topic><topic>multiplexing selector</topic><topic>optical transmission</topic><topic>power 0.5 W</topic><topic>power 0.8 W</topic><topic>voltage 240.0 mV</topic><topic>voltage 730.0 mV</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Konczykowska, A</creatorcontrib><creatorcontrib>Jorge, F</creatorcontrib><creatorcontrib>Riet, M</creatorcontrib><creatorcontrib>Nodjiadjim, V</creatorcontrib><creatorcontrib>Duval, B</creatorcontrib><creatorcontrib>Mardoyan, H</creatorcontrib><creatorcontrib>Estaran, J.M</creatorcontrib><creatorcontrib>Adamiecki, A</creatorcontrib><creatorcontrib>Raybon, G</creatorcontrib><creatorcontrib>Dupuy, J.-Y</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Konczykowska, A</au><au>Jorge, F</au><au>Riet, M</au><au>Nodjiadjim, V</au><au>Duval, B</au><au>Mardoyan, H</au><au>Estaran, J.M</au><au>Adamiecki, A</au><au>Raybon, G</au><au>Dupuy, J.-Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>212-Gbit/s 2:1 multiplexing selector realised in InP DHBT</atitle><jtitle>Electronics letters</jtitle><date>2019-03-07</date><risdate>2019</risdate><volume>55</volume><issue>5</issue><spage>242</spage><epage>244</epage><pages>242-244</pages><issn>0013-5194</issn><issn>1350-911X</issn><eissn>1350-911X</eissn><abstract>In this Letter, the authors report on the design, optimisation and electrical measurements of a new fully integrated multiplexing selector fabricated in 0.7-µm indium phosphide (InP) double-heterojunction bipolar transistor technology. All parts of the circuit were optimised to obtain 200-Gbit/s class of operation. They present electrical performances at 140 and to a record speed of 212 Gbit/s, highlighting their respective measurement challenges. The power consumption of the circuit is 0.5 and 0.8 W for a differential output amplitude of 240 and 730 mV, respectively. This selector has been successfully used as modulator driver in optical transmission experiments up to 204 Gbit/s.</abstract><pub>The Institution of Engineering and Technology</pub><doi>10.1049/el.2018.7545</doi><tpages>3</tpages></addata></record> |
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| ispartof | Electronics letters, 2019-03, Vol.55 (5), p.242-244 |
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| subjects | bipolar integrated circuits Circuits and systems Engineering Sciences fully integrated multiplexing selector heterojunction bipolar transistors III‐V semiconductors indium compounds indium phosphide double‐heterojunction bipolar transistor technology InP InP DHBT modulator driver multiplexing equipment multiplexing selector optical transmission power 0.5 W power 0.8 W voltage 240.0 mV voltage 730.0 mV |
| title | 212-Gbit/s 2:1 multiplexing selector realised in InP DHBT |
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